Jasmin Aghassi-Hagmann is a full Professor of Electrical Engineering at the Karlsruhe Institute of Technology with a Research Unit on Electronic Devices and Systems at the Institute of Nanotechnology, KIT. She has received her Master in Physics (Diploma) from the RWTH Aachen and her PhD from Karlsruhe University (KIT) in theoretical physics. For six years she worked as a research engineer at Infineon Technologies and Intel on advanced CMOS technology nodes. Her expertise is in printed electronics, semiconductors and devices, in particular in design and simulation, electrical characterization and inkjet printing of electronic devices.
Her current research (Aghassi lab) focuses on printed inorganic semiconductors such as metal oxides, printed electronic devices, in particular electrolyte-gated transistors, memristors as well as hybrid circuits for sensing, bioelectronics and security applications.